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| SFL044J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFL044 _J_ __ __ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight UB = Up Bend DB = Down Bend Package: TO-257 30 AMP / 60 Volts / 0.030 N-Channel, Logic Level POWER MOSFET Features: * * * * * * * * * * * Logic Level Gate Drive Rugged Construction with Polysilicon Gate Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Surface Mount Power Package Ceramic Seals Available for Improved Hermeticity TX, TXV, Space Level Screening Available * Replacement for IRLIZ44G Types TO-257 Pin Out: Pin1: Drain Pin2: Source Pin3: Gate Maximum Ratings Drain to Source Voltage Gate to Source Voltage Continuous Drain Current @ VGS = 5V Operating & Storage Temperature Thermal Resistance, Junction to Case Power Dissipation TC = 25C TC = 55C Symbol VDS VGS ID Top & Tstg RJC PD Value 60 10 30 -55 to +175 2 63 48 Units Volts Volts Amps C C/W W O.150 .140 .660 .645 .430 .410 1.100 .500 2x .180 .150 .200 MIN PIN 3 .420 .410 PIN 2 .105 .095 PIN 1 SUFFIX: JD .200 MIN SUFFIX: JU .180 .150 SUFFIX JDB .537 .527 3x O.035 .025 .125 .110 SUFFIX JUB .210 .190 .045 .035 SUFFIX: J Notes: 1/ For ordering information, Price, and Availability, Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Per Leg. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00265D DOC SFL044J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Electrical Characteristics @ TJ = 25C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250 A) Drain to Source On State Resistance (VGS=5 V, ID=18A) Drain to Source On Resistance (VGS=4 V, ID= 15A) Gate Threshold Voltage (VDS=VGS, ID= 250A) Forward Transconductance (VDS>10V, IDS=18A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25C) Diode Reverse Recovery Time Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ=25C, IF=51A di/dt=100A/sec VGS=0 Volts VDS=25 Volts f=1 MHz At rated VGS VGS= 5 Volts 80% rated VDS ID= 51 A VDD=50% Rated VDS ID= 51 A RG= 4.6 RD= 0.56 Symbol BVDSS RDS(on)1 RDS(on)2 VGS(th) gfs IDSS Min 60 -- Typ -- 0.026 0.034 Max -- 0.030 0.040 2.0 -- 25 250 +100 -100 66 12 43 -- -- -- -- 2.5 180 -- -- -- Units Volts V S(mho) A 1.0 22 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.5 35 -- -- -- -- 50 10 38 17 230 42 110 -- 100 3300 1200 200 IGSS Qg Qgs Qgd td(on) tr td(off) tf VSD trr Ciss Coss Crss nA nC nsec V nsec pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00265D DOC |
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